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D series planar fully depleted silicon surface barrier radiation detector

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D series planar fully depleted silicon surface barrier radiation detector image

D series planar fully depleted silicon surface barrier radiation detector

Product model:

Brief description:Main applications are heavy ion time of flight measurements

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Detailed introduction

Main applications
For heavy ion time of flight measurements.
  • information +

    • Download link D Series Brochure
    • Download link D series brochure (A4)
  • Installation layout +


    Mount must be specified when ordering.

    A
     This is a "ring mount"; i.e. the silicon die is on its ring and there are no output connectors. This less frequently used layout is available on special request. Applicable to40 μmto100 μmdetector.

    E  This is a special type of transfer mount whose four screws can be carefully adjusted to avoid putting excessive stress on the particularly fragile silicon wafer. Suitable for thicknesses up to40.0 μmdetector. NOTE: Disassembly is possible by removing the screwsEMount.VSizes provided to fit0.080Screw, diameter is1.7 mmthe distance between the mounting holes.

    T  sidewaysMicrodotConnector (opening to the rear), depleted depth>40.0 μm。

    Dimensions are in millimeters.
     

    Detector size (mm2)

    W (nominal)
    Atype  Etype detachable transmission Ttype transmission
    X Y X Y Z V X Y Z
     050  8.0 15.2 3.7
    25.1 7.7 7.0 18.2 19.4 7.9 9.9
     150  13.8 22.0 3.7
    31.9 7.7 7.0 25.0 26.1 7.9 9.9
     300  19.5 27.1 3.7
    37.1 7.7 7.0 30.1 31.6 7.9 9.9
     450 23.9 30.5 3.7
    40.2 7.7 7.0 33.3 34.8 7.9 9.9
     Tolerance ±0.5 ±0.3
    ±0.3
    ±0.5 ±0.3 ±0.3 ±0.3 ±0.3
    ±0.3
    ±0.3
  • Ordering information +


    Mount must be specified when ordering.

    Unless otherwise stated, available for E-mounts up to 40.0 μm thick; available for T-mounts >40.0 μm thick.

    *All standard depleted detectors are cut off-axis from the parent crystal at a specific angle, which will minimize ion tunneling effects. Larger areas available by special order. Other areas and depths available by special order.

    **The first three digits of the model number indicate the total system noise width measured using standard ORTEC electronics and a 0.5-μs shaping time constant. Noise width is given for each range and the minimum thickness (capacitance) of the specified nominal area. For high capacitance cells, performance depends on actual thickness and area.

    Note:CompatibleAlphaKit of detectors:ENS-Series(Installation and testing included with purchase of new system)、ENS8Series(new system8Package spare parts)、BInterfaceULTRA-ASand low backgroundR series detector models are guaranteed to beAlphaKit products(DUO、MEGA、ARIA、ENSEMBLE)Compatible. All other detectors require special approval to ensure compatibility and specifications.


    Effective area (mm2)


    Thickness change (μm)

    exhaustion depth15 µm
    range7-15µm

    exhaustion depth25 µm
    range15.1-25µm

    exhaustion depth40 µm
    range25.1-40µm

    Model

    Model

    Model

    10

    ±0.5

    D-020-010-15

    50

    ±0.5

    D-035-050-15

    D-035-050-25

    D-020-050-40

    150

    ±1.0

    D-060-150-25

    D-035-150-40

    300

    ±1.0

    D-095-300-25

    D-055-300-40

    450

    ±3.0

    D-100-450-25

    D-090-450-40




    Effective area (mm2)


    Thickness change (μm)

    exhaustion depth50 µm
    range40.1-65µm

    exhaustion depth75 µm
    range65.1-85µm

    exhaustion depth100 µm
    range85.1-110µm

    Model

    Model

    Model

    50

    ±0.5

    D-015-050-50

    D-015-050-75

    D-015-050-100

    150

    ±1.0

    D-030-150-50

    D-030-150-75

    D-025-150-100

    300

    ±1.0

    D-045-300-50

    D-040-300-75

    D-030-300-100

    450

    ±3.0

    D-070-450-50

    D-060-450-75

    D-060-450-100


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